2N112A PNP Transistor

The 2N112A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N112A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N112A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N112A transistor as follows.

2N112A Transistor Specification

Transistor Code		2N112A
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO22
Collector Power Dissipation (Maximum)	PC	0.13W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	85°C
Emitter-Base Voltage (Maximum)	VEB	20V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	2MHz
Collector Capacitance	CC	24pF

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