2G110 PNP Transistor

The 2G110 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2G110 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2G110 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2G110 transistor as follows.

2G110 Transistor Specification

Transistor Code		2G110
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.14W
Collector-Base Voltage (Maximum)	VCB	18V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	100MHz
Collector Capacitance	CC	5pF

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